[17a-Z17-1~11] 9.4 Thermoelectric conversion

[17a-Z17-7] Electron transport mechanism in e-CoSi film/Si for high thermoelectric power factor

〇Takafumi Ishibe¹, Yuto Uematsu¹, Ryosuke Takenaka², Katsuhiro Suzuki², Kazunori Sato², Takeshi Fujita³, Eiichi Kobayashi⁴, Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., 2.Grad. School of Eng., 3.Kochi Univ. of Technol., 4.Kyushu Synchrotron Light Research Center)

Keywords:Thermoelectric material, Silicide, Dirac

In recent years, it was reported that bulk e-CoSi with Dirac-like band and heavy hole band crossing Dirac point near Fermi level exhibited high thermoelectric power factor (PF). This high PF is likely attributed to the increase of average entropy per unit conducting electron brought by the preferential scattering of low-energy electron in Dirac-like band to heavy hole band. However, there have been no experimental evidence that the PF is related to the peculiar band strucure. In this study, we form single-phase e-CoSi films/Si with peculiar band structure and experimentally reveal the carrier transport mechanism bringing high PF.