2021年第68回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[17a-Z19-1~12] 10.2 スピン基盤技術・萌芽的デバイス技術

2021年3月17日(水) 09:00 〜 12:15 Z19 (Z19)

谷口 知大(産総研)、重松 英(京都大学)

09:00 〜 09:15

[17a-Z19-1] External magnetic field dependent current in a single-electron transistor using Pd nanogap electrodes and an Au nanoparticle

Meietu You1、Ryo Toyama1、Toshiharu Teranishi2、Yutaka Majima1 (1.Tokyo Tech、2.Kyoto Univ.)

キーワード:Single-electron transistor using, Au nanoparticle, paramagnetic material

Spin-dependent single-electron tunneling, which is based on interplay between single-electron changing effect and tunnel magnetoresistance (TMR) effect, has attracted much attention owing to its unique phenomena such as the enhancement and the oscillation of TMR. These phenomena have been observed in ferromagnetic tunnel junctions and ferromagnetic granular structures.
Recently, we have reported a chemically-assembled single-electron transistor (SET) using Pt-based nanogap electrodes and an Au nanoparticle, which showed clear and ideal Coulomb diamonds. To realize the chemically-assembled SET, robust Pt-based nanogap electrodes with a 10-nm-scale ultrafine linewidth were fabricated by electron-beam lithography (EBL) and electron-beam (EB) evaporation, and an alkanethiol-protected Au nanoparticle was chemisorbed between the gap using alkanedithiol self-assembled monolayer (SAM). This SET structure consisting of paramagnetic source/tunnel barrier/metallic Coulomb island/tunnel barrier/paramagnetic drain, as double barrier magnetic tunnel junctions, could be utilized to study spin-dependent single-electron tunneling when an external magnetic field is applied.
Here, we demonstrate external magnetic field dependent current in a chemically-assembled SET based on Pd nanogap electrodes and an Au nanoparticle.
This study was partially supported by MEXT Elements Strategy Initiative to Form Core Research Center (Grant No. JPMXP0112101001).