2021年第68回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[17a-Z19-1~12] 10.2 スピン基盤技術・萌芽的デバイス技術

2021年3月17日(水) 09:00 〜 12:15 Z19 (Z19)

谷口 知大(産総研)、重松 英(京都大学)

11:45 〜 12:00

[17a-Z19-11] Magnetization-dependent inverse spin Hall effect at perpendicular magnetized Tb-Co/Pt interface

〇(P)Ahmet Yagmur1、Hiroyuki Awano1、Kenji Tanabe1 (1.Toyota Tech. Inst.)

キーワード:Inverse spin Hall effect, spin Seebeck effect

Recently, it has been investigated that spin-orbit coupling at magnetic/nonmagnetic interface induce a spin-to-charge current conversion with different symmetry from the conventional inverse spin Hall effect (c-ISHE) [1,2]. Here, the orientation of spin current polarization can be manipulated by the direction of perpendicular magnetized material (figure) [3]. In this study, we investigate the magnetization-dependent inverse spin Hall effect (md-ISHE) in SiN(10 nm cap)/TbxCo100-x(19 nm)/Pt(1 nm)/YIG(167 nm)/SiO2 (substrate) devices due to spin Seebeck effect. We clearly observe voltage signals due to the c-ISHE and md-ISHE in our devices, which the md-ISHE polarity depends on the magnetization direction of spin converter layer. Moreover, the magnitude of induced charge current due to md-ISHE is observed to be almost insensitive for all TbxCo100−x samples, whereas the c-ISHE significantly depends on the composition ratio.
This work was partially supported by a Grant-in-Aid for Scientific Research(C) (Grant No. 20K05307) from JSPS and the Tokai Foundation of Technology.