[17a-Z22-1~10] 11.4 Analog applications and their related technologies

△ [17a-Z22-10] Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors

〇(P)Takahiro Kikuchi¹, Satoshi Kohjiro¹, Ryota Hayakawa^1,3, Goh Fujii¹, Masahiro Ukibe¹, Fuminori Hirayama¹, Ryan Smith², Masashi Ohno² (1.AIST, 2.Univ. of Tokyo, 3.Metropolitan Univ.)

Keywords:Transition Edge Sensor, Tri-layer Membrane, Thermal Conductance

Silicon-nitride (Si_xN_y) membrane has been well studied by many institutes in ages. However, there is an opportunity that superconducting properties of Transition Edge Sensor (TES) are not uniform when conventional Si_xN_y membranes are stood. Therefor, we employed Silicon-Oxide (SiO₂) and fabricated tri-layer membrane, SiO₂/Si_xN_y/SiO₂. There are no studies or reports on thermal characteristics of the tri-layer membrane. That’s why, we fabricated and measured by ourselves. In this presentation, we are going to report some knowledge on thermal conductance.