[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-2] Conversion of threading screw dislocation during off-oriented PVT growth of 4H-SiC

〇Kazuma Eto¹, Takeshi Mitani¹, Kenji Momose², Tomohisa Kato¹ (1.AIST, 2.Showa Denko K.K.)

Keywords:SiC, crystal growth, dislocation

In the sublimation growth of SiC single crystal, various off-angle growth experiments were conducted to evaluate the conversion behavior of TSD. TSD is not converted under the condition of 4 ° off, but conversion to basal plane defects is observed at a rate of about 10 to 20% at 8 ° and 15 ° off. These results indicate that Flank defects are easy to propagate on the basal plane at high off angles growth.