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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 17, 2021 9:00 AM - 11:45 AM Z28 (Z28)

Shunta Harada(Nagoya Univ.)

10:15 AM - 10:30 AM

[17a-Z28-5] Comparison of Al-adatom Concentrations near Step-edges during CVD of SiC on Si- and C-faces

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:SiC, aluminum, step