[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-6] Analysis of Surface-diffusion Lengths of Carbon- and Nitrogen-Containing Molecules during Homoepitaxial Growth of 4H-SiC (0001) under Silicon-rich Conditions

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:SiC, nitrogen, surface diffusion