[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-8] SiC Epitaxial reactor cleaning by detaching SiC film

Takumi Mamyouda¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama National Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Keywords:Silicon carbide CVD, Cleaning, Chlorine trifluoride

In order to improve the silicon carbide epitaxial wafer productivity, the silicon carbide CVD reactor cleaning process was developed. The cleaning process was studied using the chlorine trifluoride gas at 100% and at atmospheric pressure, utilizing the detaching behavior of the particle-type SiC film formed on the purified pyrolytic carbon film.