[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-9] To construct 4H-SiC p/n columns with relatively uniform doping profiles

〇Shiyang Ji¹, Katzutoshi Kojima¹, Mitsuru Sometani¹, Shinsuke Harada¹, Yasunori Tanaka¹, Hiroshi Yamaguchi¹ (1.AIST)

Keywords:4H-SiC, trench filling epitaxial growth, CVD

In contrast to conventional method, in this work, n-type epilayer has been filled into p-type trench.
The often happened Al-doping variation inside trench can be improved. Both p/n columns show relatively uniform doping profiles.