[17a-Z28-1~10] 15.6 IV族系化合物（SiC）

[17a-Z28-9] 4H-SiC PNコラムの濃度プロファイルの改善

〇紀 世陽¹、児島 一聡¹、染谷 満¹、原田 信介¹、田中 保宣¹、山口 浩¹ (1.(国研)産総研)

キーワード：炭化ケイ素、埋込み成長、化学気相成長

In contrast to conventional method, in this work, n-type epilayer has been filled into p-type trench.
The often happened Al-doping variation inside trench can be improved. Both p/n columns show relatively uniform doping profiles.