[17p-P02-1~8] 3.13 Semiconductor optical devices

[17p-P02-1] Lasing characteristics of MQW lasers with surface electrode structure on wafer directly bonded InP/SiO₂/Si substrates

〇Xu Han¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Motonari Sato¹, Kota Shibukawa¹, Shingo Ito¹, Koji Agata¹, Momoko Kotani¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:LD, InP/SIO2/Si substrate, wafer directly bonding