[17p-P07-1~6] 22.1 Joint Session M "Phonon Engineering"

[17p-P07-6] Thickness dependence of surface phonon-polariton propagation length in SiO₂/Si/SiO₂ structure

〇Saeko Tachikawa¹, Jose Ordonez-Miranda², Yunhui Wu¹, Laurent Jalabert^1,3, Roman Anufriev¹, Sebastian Volz^1,3, Masahiro Nomura¹ (1.IIS, Univ. of Tokyo, 2.Inst. Pprime, CNRS, 3.LIMMS/CNRS-IIS)

Keywords:Surface phonon-polaritons, Heat transfer, semiconductor material

We investigated the propagation of surface phonon-polaritons in SiO₂/Si/SiO₂ three-layered structure, which is mechanically more stable than a film of nanometric thickness. When Si layer is thick enough, in-plane propagation length is longer for thicker Si as there are modes propagating inside Si of non-lossy material, carrying energy for distance. However, as the Si thickness becomes shorter than the wavelength, thinner Si yields longer propagation length due to the stronger contribution of coupling between two SiO₂ layers.