[17p-P11-1~8] 13.9 Compound solar cells

[17p-P11-1] [Highlight]Relation between EL Intensity of Narrow-gap Base Layer and Doping Concentration of Wide-gap Emitter Layer in Heterojunction Solar Cells

〇Tetsuya Nakamura¹, Mitsuru Imaizumi¹, Warakorn Yanwachirakul², Masakazu Sugiyama³, Hidefumi Akiyama^4,5, Yoshitaka Okada³ (1.JAXA, 2.Univ. of Tokyo, 3.RCAST, 4.ISSP, 5.OPERANDO-OIL)

Keywords:Heterojunction solar cell, SRH recombination

Reducing the Shockley-Read-Hall (SRH) recombination loss in the depletion region is an important challenge for improving the conversion efficiency of solar cells. In the case of heterojunction structure, it is considered that the SRH recombination rate in the depletion region can be reduced by using the difference in the intrinsic carrier densities of the two materials. In this presentation, we discuss the effect of the heterojunction structure on reducing the SRH recombination rate in the depletion region from the relation between electroluminescence intensity of narrow-gap base layer and doping concentration of wide-gap emitter layer in heterojunction solar cells.