[17p-P11-1~8] 13.9 Compound solar cells

[17p-P11-8] Introduction of Al₂O₃ passivation layers into CIGS solar cells

〇Yukiko Kamikawa¹, Marco Nardone², Hajime Shibata¹, Shogo Ishizuka¹ (1.AIST, 2.BGSU)

Keywords:solar cells, chalcopyrite, passivation

Suppression of interfacial recombination is indispensable for improving the characteristics of semiconductor devices. For CIGS solar cells, a group at Uppsala University reported the effectiveness of oxide film (Al₂O₃) as a passivation layer in 2013. On the other hand, the influence of mobile ions (Na⁺. K⁺) in CIGS on the fixed charge in the oxide film has not fully elucidated. In this study, we introduced an Al₂O₃ passivation layer into thin CIGS solar cells and MOS structures and its effects on device properties and interfacial characteristics were investigated.