[17p-Z02-1~7] Progress and future prospects in phase change memory materials

[17p-Z02-2] β→α polymorphic transformation in MnTe films via atomic-displacement

〇Shunsuke Mori¹, Daisuke Ando¹, Yuji Sutou¹ (1.Tohoku Univ.)

Keywords:manganese telluride, polymorphic transformation, displacive transformation

A MnTe polymorphic film showing the remarkable change in physical properties upon polymorphic transformation via atomic-displacement is expected to enable the faster and lower energy memory operation than conventional materials using phase change between amorphous and crystalline phases. It is considered that such a displacive transformation is accompanied by the mechanical constraint from the surrounding substrate or electrode. In this study, we investigated the β→α polymorphic transformation mechanism under the constraint from a W electrode.