[17p-Z15-1~19] 1.4 Energy conversion, storage, resources and environment

[17p-Z15-5] Electron energies in nm-scale impurity region and their application for photovoltaics

〇Isamu Jonoshita¹ (1.personal participate)

Keywords:Photovoltaics, Ion Implantation, Dressed Photon

It is claimed in certain patent that nm-scale dopant-rich region can be formed by specific ion implantation in crystal Silicon. Those regions can restrict the orbital of the electron whose energy is lower than that of free electron. In this study, some cases of those regions are assumed. And energy of restricted electron will be calculated by Ritz variational method. The result of this calculation indicates that the electron energies and their variation make possible the light energy absorption at resonance frequency. This may break theoretical solar cell efficiency limit caused by Silicon band gap.