[17p-Z18-1~16] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [17p-Z18-6] Anomalous Reversible Sn-Dopant Deactivation between Indium Tin Oxide and Single-Crystalline Oxide Nanowire

〇(P)HAO ZENG¹、Tsunaki Takahashi^1,2、Takehito Seki¹、Masaki Kanai³、Guozhu Zhang¹、Takuro Hosomi^1,2、Kazuki Nagashima^1,2、Naoya Shibata¹、Takeshi Yanagida^1,3 (1.Tokyo Univ.、2.(JST), PRESTO、3.Kyushu Univ.)

キーワード：Nanowire, Nano device, Interface

Implantation of an impurity dopant into a semiconductor is a common and irreversible technique to manipulate the electrical properties of modern electronics. Here, we present an anomalous dopant activation/deactivation behavior, which is reversible and only occurs at the interface between indium tin oxide (ITO) and single-crystalline oxide channel. We found that the conductance of the interface between ITO contact and single-crystalline oxide nanowire can be repeatedly manipulated between a metallic state and a near-insulative state via utilizing thermal annealing in air or vacuum. Interestingly, this electrical switching phenomenon cannot be observed when using the lithography-defined polycrystalline oxide nanowire instead of single-crystalline nanowire. Further atmosphere-controlled thermal treatments show that the oxygen in atmospheric air induces the reversible variation in the conductance of the interface between ITO contact and single-crystalline oxide nanowire. Systematic investigations on metal cation species and channel crystallinity indicate that the electrical switching phenomenon can be explained by an interface-specific reversible Sn-dopant activation/deactivation of ITO electrode in contact with a single-crystalline oxide channel.