[17p-Z19-8~24] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [17p-Z19-10] Ultrafast spin orbit torque magnetization switching by using two current pulses

〇Motomi Aoki¹、Syuta Honda²、Ryo Ohshima¹、Ei Shigematsu¹、Teruya Shinjo¹、Masashi Shiraishi¹、Yuichiro Ando¹ (1.Kyoto Univ.、2.Kansai Univ.)

キーワード：spin orbit torque, magnetization switching, magnetization dynamics

Magnetization switching induced by spin-orbit torque (SOT) has attracted much interest because it enables the magnetic random-access memory (MRAM) with high durability. For the practical applications, a fast SOT magnetization switching is essential from a view point of fast and low-power operations. In this study, we demonstrated high-speed SOT magnetization switching of a Ni20Fe80 (Py) electrode on a platinum (Pt) layer by injecting two types of pulse currents in the Pt layer from different directions. In our method, writing currents only flow in the Pt/Py layers. Therefore, both ultrafast magnetization switching and the high durability of SOT-MRAM were realized simultaneously. The voltage level of current pulse (width : 1 ns) for switching the magnetization was obviously suppressed at a certain condition, indicating the realization of ultrafast SOT magnetization switching.