[17p-Z19-8~24] 10.3 Spin devices, magnetic memories and storages

[17p-Z19-13] Relaxation time of in-plane stochastic magnetic tunnel junctions

〇Shun Kanai^1,2,3,4, Keisuke Hayakawa¹, Takuya Funatsu¹, William A. Borders¹, Junta Igarashi¹, Butsurin Jinnai⁵, Hideo Ohno^1,2,4,5,6, Shunsuke Fukami^1,2,4,5,6 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University, 2.CSRN, Tohoku University, 3.DEFS, Tohoku University, 4.CSIS, Tohoku University, 5.WPI-AIMR, Tohoku University, 6.CIES, Tohoku University)

Keywords:spintronics, magnetic anisotropy, random telegraph noise (RTN)

Stochastic magnetic tunnel junctions (MTJs) have gathered much attention as a promising building block for probabilistic computing. Integer factorization has been demonstrated with stochastic MTJs with a perpendicular easy axis (p-MTJs) and milliseconds-long relaxation time t [1]. In contrast, t of in-plane easy-axis MTJs (i-MTJs) is reported to be down to sub-microseconds [2]. Here, we study the mechanism governing the different timescale of t in stochastic MTJs.
[1] W.A. Borders et al, Nature 573, 390 (2019). [2] B. Parks et al., Phys. Rev. Appl., 13, 014063 (2020).