[17p-Z19-8~24] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[17p-Z19-13] Relaxation time of in-plane stochastic magnetic tunnel junctions

〇金井 駿^1,2,3,4、Keisuke Hayakawa¹、Takuya Funatsu¹、William A. Borders¹、Junta Igarashi¹、Butsurin Jinnai⁵、Hideo Ohno^1,2,4,5,6、Shunsuke Fukami^1,2,4,5,6 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University、2.CSRN, Tohoku University、3.DEFS, Tohoku University、4.CSIS, Tohoku University、5.WPI-AIMR, Tohoku University、6.CIES, Tohoku University)

キーワード：スピントロニクス、磁気異方性、ランダムテレグラフノイズ

Stochastic magnetic tunnel junctions (MTJs) have gathered much attention as a promising building block for probabilistic computing. Integer factorization has been demonstrated with stochastic MTJs with a perpendicular easy axis (p-MTJs) and milliseconds-long relaxation time t [1]. In contrast, t of in-plane easy-axis MTJs (i-MTJs) is reported to be down to sub-microseconds [2]. Here, we study the mechanism governing the different timescale of t in stochastic MTJs.
[1] W.A. Borders et al, Nature 573, 390 (2019). [2] B. Parks et al., Phys. Rev. Appl., 13, 014063 (2020).