[17p-Z19-8~24] 10.3 Spin devices, magnetic memories and storages

[17p-Z19-21] Flash lamp annealing of magnetic tunnel junctions

〇Akiko Imai¹, Shinya Ota^1,2, Kento Hasegawa^1,2, Yasushi Kanai¹, Tomohiro Koyama^1,3, Teppei Araki¹, Tsuyoshi Sekitani¹, Daichi Chiba^1,3 (1.ISIR, Osaka Univ., 2.The Univ. of Tokyo, 3.CSRN, Osaka Univ.)

Keywords:magnetic tunnel junction, flash lamp annealing, tunnel magneto resistance (TMR)

In general, an annealing process for several hours at high temperature (> 300^oC) have been required to acquire large tunnel magnetoresistance (TMR) ratio in CoFeB/MgO-based sputter-deposited magnetic tunnel junctions. In this talk, we show that using flash lamp annealing, the TMR ratio of ~100% can be realized in a much shorter time (< 2 seconds).