[17p-Z19-1~7] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [17p-Z19-4] Ionic-gate tuning of spin-torque ferromagnetic resonance in nanometer-thick platinum

〇Ryo Ohshima¹、Yuto Kohsaka¹、Yuichiro Ando¹、Teruya Shinjo¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：spin torque ferromagnetic resonance, spin Hall effect, ionic gating

Platinum (Pt) possesses large spin-orbit interaction (SOI) and is often selected as a material to study the spin-charge conversion, namely the spin Hall effect (SHE) and its inverse effect (ISHE). A previous study showed that the ionic-gate tuning of the resistance and the ISHE in Pt, and these effects were prominent when the thickness of Pt was thinner than 3 nm. Given that the SHE and the ISHE are interconnected by Onsager reciprocity, detection of the reciprocal effect of the gate-tunable ISHE in a nanometer-thick Pt, i.e., a gate-tunable SHE, can be expected. Here, we demonstrate an ion-gate tuning of the spin-torque ferromagnetic resonance (STFMR) by using a Pt/NiFe (Py) bilayer film.