[17p-Z19-1~7] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [17p-Z19-6] Field-free spin-orbit torque switching by utilizing gate-induced structural asymmetry

〇Kento Hasegawa^1,2、Tomohiro Koyama^2,3、Daichi Chiba^2,3 (1.The Univ. of Tokyo、2.ISIR, Osaka Univ.、3.CSRN, Osaka Univ.)

キーワード：spin-orbit torque, magnetization switching

Spin-orbit torque (SOT) is an attractive way to control perpendicular magnetization, but the necessity of in-plane external field hinders its implementation. To date, several approaches have been proposed to overcome this issue, and one of which is use of laterally asymmetric structure. Here, we demonstrate the field-free SOT switching by introducing an asymmetry through gate-induced oxygen migration.