[17p-Z27-1~14] 15.4 III-V-group nitride crystals

△ [17p-Z27-6] High efficiency Luminescence of nitride semiconductors with InGaN/GaN quantum wells by SiO₂ thin films

〇Seiya Kaito¹, Shimanoe Kohei¹, Matsuyama Tetsuya¹, Wada Kenji¹, Funato Mitsuru², Kawakami Yoichi², Okamoto Koichi¹ (1.Osaka prefecture Univ., 2.Kyoto Univ.)

Keywords:nitride semiconductor, High efficiency luminescence

Various studies have been conducted to improve the luminescence efficiency of light emitting diodes (LEDs) based on InGaN/GaN quantum wells, but the green gap problem still remains, where the luminescence efficiency decreases significantly as the In composition increases, making it difficult to achieve high efficiency in the green region. We have reported simple and inexpensive high-efficiency luminescence based on surface plasmon resonance using metal thin films, but there is a problem that there is no suitable metal to enhance the green region due to the high loss of metal. In this paper, we report a surprising finding that the luminescence efficiency, especially in the green region, can be significantly improved by depositing SiO2 thin film instead of metal on the surface.