[17p-Z28-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-Z28-12] Annealing-induced structural deformation of droplet epitaxial InAs quantum dots on InP(111)A

〇Takaaki Mano¹, Akihiro Ohtake¹, Neul Ha¹, Takeshi Noda¹, Yoshiki Sakuma¹, Takashi Kuroda¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:quantum dot, self-assembly, strain

We have studied annealing-induced structural evolution of uncapped InAs quantum dots (QDs) on InAlAs/InP(111)A substrates formed by droplet epitaxy. The annealing of uncapped InAs QDs results in flowing out of InAs from the QDs forming two-dimensional InAs. The flowing out of InAs from the QDs suppressed when the coverage of the two-dimensional InAs reaches certain saturation thickness. After annealing at 370 °C, the saturation thickness is less than 1 ML, indicating that the flowing out of InAs become suppressed after two-dimensional InAs forms only around the QDs with limited extent. After annealing at 470 °C, the saturation thickness is around 1 ML, indicating that two-dimensional growth continues until 1ML-thick-two-dimensional InAs covers nearly entire surface.