[17p-Z28-1~14] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [17p-Z28-5] Impacts of growth parameters on the morphology of In(AlGa)P grown by high speed MOCVD

〇Hassanet Sodabanlu¹、Akinori Ubukata²、Kentaroh Watanabe¹、Takeyoshi Sugaya³、Yoshiaki Nakano⁴、Masakazu Sugiyama^1,4 (1.RCAST, U. Tokyo、2.Taiyo Nippon Sanso、3.AIST、4.School Eng, U. Tokyo)

キーワード：MOCVD, III-V semiconductor, InGaP