[17p-Z28-1~14] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [17p-Z28-7] Control of density of 3D Stacked Submonolayer (SML) InAs Nanostructures by As₂ flux

〇(P)Ronel Intal Roca¹、Itaru Kamiya¹ (1.Toyota Tech. Inst.)

キーワード：submonolayer, 2D to 3D transition, InAs nanostructures

Stacked submonolayer (SML) growth of InAs nanostructures by MBE has been gaining interest recently for various optoelectronic applications. In contrast to the well-known Stranski-Krastanov (SK) growth of InAs nanostructures, stacked SML growth involves the cycled deposition of SML-thick InAs and few ML-thick GaAs. We have recently reported evidence of the 2D to 3D transition in SML InAs nanostructures. This transition leads to the existence of two distinct kinds of stacked SML nanostructures: 2D islands and 3D structures. Compared to the analogous transition in SK growth, the properties of the stacked SML transition is not yet well investigated. Hence, this study aims to elucidate the controllability of the density of 3D structures by As₂ flux. It will be demonstrated that a wide control of 3D structure density is possible simply by adjusting the As₂ flux in stacked SML growth.