[17p-Z32-1~7] 15.1 Bulk crystal growth

[17p-Z32-3] The control of thermal transport using thermal insulators with different thermal conductivities in the TSSG method for SiC crystals

〇(M2)Yuto Takehara¹, Yasunori Okano¹ (1.Osaka Univ.)

Keywords:TSSG, SiC, Bayesian optimization

It is necessary to control the temperature distribution in the melt in order to achieve a high- and uniform-crystal growth rate in the TSSG method for SiC crystals. In this study, the temperature distribution is controlled by optimizing the thermal conductivities of the insulators. As a result, the temperature field was controlled with the appropriate thermal conductivities of the insulators, and the high- and uniform-crystal growth rate was successfully obtained.