11:00 AM - 11:50 AM
▲ [18a-P04-14] Investigation of Tunneling Barriers for Si Spin-Valve Devices
Keywords:barrier layer, spin injection
In this study, we prepared samples of Fe/ tunnel barrier / n+Si substrate with different insulating materials (MgO, MgAl2O4, Al2O3) as the tunnel barrier, and studied their barrier height. Here, MgO layers were grown by either molecular beam epitaxy (MBE) or magnetron sputtering, MgAl2O4 layers were grown by magnetron sputtering, and Al2O3 layers were grown by atomic layer deposition (ALD). We fabricated diode structures of Fe/tunnel barrier/ n+Si and measured their I-V characteristics at 4.2 K, from which we calculated the barrier height using the Simmons model. As a result, at the barrier thickness of 1.5 nm, the barrier height is nearly the same for MgO (Sputter), MgAl2O4 (Sputter), and Al2O3 (ALD). Our results suggest that defect density in MgAl2O4 (Sputter) and Al2O3 (ALD) increases much faster than in MgO when the barrier thickness increases.
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