[18a-Z10-1~10] CS.4 Code-sharing Session of 3.11 & 3.13

[18a-Z10-1] Nanocavity Raman silicon laser excited in a 1.2 μm wavelength band

〇Masanao Fujimoto¹, Hiroko Okada¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Raman silicon laser, photonic crystal, Raman scattering

We have developed a silicon Raman laser that oscillates continuously at room temperature with a threshold of 1 µW or less using a high-Q photonic crystal nanocavity. This device research has been conducted from the 1.31 µm band to the 1.55 µm band, which are the main optical communication wavelength bands. Silicon is transparent even in the 1.2 µm band on the shorter wavelength side. Since the Raman scattering probability is doubled compared to the 1.55 µm band, it can be expected that the laser threshold will decrease and the output will improve. The absorption of water molecules adhering to the silicon surface is more than an order of magnitude smaller than the 1.55 µm band, which is advantageous for bioapplication. Because of these advantages, we have been developing a Raman laser in the 1.2 µm band. We report the first confirmation of Raman laser oscillation in the 1.2 µm band.