[18a-Z11-1~13] 2.1 Radiation physics and Detector fundamentals

[18a-Z11-10] Effect of GaN inter-layer on thick BGaN crystal growth and device characterization

〇Shinya Matsukawa¹, Yuto Ohta¹, Atsuya Miyazawa¹, Hisaya Nakagawa², Seiya Kawasaki³, Yuto Ando³, Yoshio Honda⁴, Hiroshi Amano^4,5, Yoku Inoue¹, Toru Aoki², Tkayuki Nakano¹ (1.Shizuoka Univ., 2.R.I.E. Shizuoka Univ., 3.Nagoya Univ., 4.IMaSS, Nagoya Univ., 5.Akasaki Reserch Center.)

Keywords:Compound Semiconductor, GaN, neutron