[18a-Z11-1~13] 2.1 Radiation physics and Detector fundamentals

[18a-Z11-2] Radiation hardness evaluation of ELT in Ring-oscillator

〇Arisa Kimura¹, Ryoichiro Yoshida¹, Motoki Ando¹, Yuta Oshima¹, Shinsuke Nabeya¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

Keywords:TID effect, MOSFET, ELT

We discuss about Radiation Hardened by Design (RHBD) approach for CMOS integrated circuits. Among those, Enclosed Layout Transistors (ELT) has been successful in providing resistance to higher level Total Ionizing Dose (TID). In this work, ELT MOSFET and Ring-oscillator circuits have been evaluated in Gamma-ray irradiation test. The proposed Ring-oscillator evaluation includes the comparison between MOSFET of standard layout and ELT. From these results, we have confirmed that Ring-oscillator designed with proposed ELT approach are tolerant for TID effect.