[18a-Z20-1~8] 6.1 Ferroelectric thin films

[18a-Z20-3] 10⁹ cycle-High Endurance SBT-Based FeFET with Good Scalability

〇Mitsue Takahashi¹, Shigeki Sakai¹ (1.AIST)

Keywords:ferroelectric, SBT, FeFET

A new fabrication process of SBT-FeFETs was proposed and demonstrated. The finished FeFET of Ir/SBT/HfO₂/Si had a channel length L = 85 nm. It exhibited 10⁹ cycle-high endurance and 10⁵ s-long stable retention. By adopting a replacement-gate process, benefits of the novel SBT FeFETs are good manufacturability with etching-less SBT in the gate stack, good area-scalability, high production-process affinity with conventional Si, and the SBT-thickness scalability with L.