[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-Z24-1] Fabrication of lattice matched GaAsPN solar cell on Si substrates (2)

〇Tomoya Arai¹, Keisuke Yamane¹, Toshinori Eko¹, Daiki Hamamoto¹, Akihiro Wakahara¹ (1.Toyohashi University of Technology)

Keywords:compound semiconductor solar cell, Dilute nitrides

GaAsPN solar cell test devices were fabricated by reviewing the growth conditions, and through device simulations, guidelines for higher efficiency were obtained. The MBE method was used for crystal growth, and a sample with 5% N composition was fabricated. As a result, an efficiency of 3.0% was obtained. By using the measured data of the fabricated sample and the GaAsPN monolayer film, it was found that the optimization of the thickness of the absorber layer, carrier concentration and trap density is important for further improvement of the efficiency. In conclusion, higher efficiency was obtained in the test device of Si lattice-matched GaAsPN solar cell with revised conditions, and a guideline for higher efficiency was obtained.