[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [18a-Z24-2] Effects of Annealing Treatment on N Distribution and Electrical Characteristics of GaAsN Films with Different N Distribution Grown by Atomic Layer Epitaxy

〇Ryo Nakajima¹, Masahiro Kawano¹, Ryo Minematsu¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:GaAsN, Atomic Layer Epitaxy, Hall Effect