[18a-Z24-1~9] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

[18a-Z24-4] 【注目講演】III-V族ナノワイヤ中の積層欠陥により形成される急峻なヘテロ界面

〇章 国強^1,2、舘野 功太^1,2、俵 毅彦^1,2、後藤 秀樹¹ (1.NTT物性研、2.NTTナノフォトセンタ)

キーワード：半導体、ナノワイヤ、ヘテロ界面

III-V compound semiconductor nanowires have been considered as next-generation building blocks. Atomically-abrupt heterointerfaces, as ideal structures, are quite challenging to be realized in III-V nanowires due to reservoir effect and interface diffusion. Stacking faults, which usually exist in bottom-up-synthesized III-V nanowires, are generally believed to be a kind of plane defect. In this study, we show stacking faults, despite the defect feature, can drive formation of atomically abrupt heterointerfaces in III-V nanowires. Furthermore, we have also clarified the formation mechanism.