The 68th JSAP Spring Meeting 2021

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z24 (Z24)

Masakazu Arai(Univ. of Miyazaki), Sachie Fujikawa(Saitama University)

10:15 AM - 10:30 AM

[18a-Z24-5] Growth of Bismide compound semiconductor on InP(311)B substrate

〇Kouichi Akahane1, Atsushi Matsumoto1, Toshimasa Umezawa1, Yoriko Tominaga2, Naokatsu Yamamoto1 (1.NICT, 2.Hiroshima Univ.)

Keywords:Dilute bismide compound semiconductor, Molecular beam epitaxy

In this paper, we investigate the growth of InPBi on InP(311)B substrate which is important surface orientation for the growth of InAs quantum dot.