The 68th JSAP Spring Meeting 2021

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z24 (Z24)

Masakazu Arai(Univ. of Miyazaki), Sachie Fujikawa(Saitama University)

10:30 AM - 10:45 AM

[18a-Z24-6] Control of GaBi molar fraction of GaAs1-xBix grown at low temperatures

〇Yoriko Tominaga1,2, Tatsuya Umenishi1, Yuto Takagaki2, Mitsuki Yukimune3, Fumitaro Ishikawa3 (1.Adv. Sci. and Eng., Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Sci. Eng., Ehime Univ.)

Keywords:Bismide III-V compound semiconductors, Low-temperature growth