[18p-P01-1~3] 3.2 Equipment optics and materials

[18p-P01-3] Development of a realistic simulation model for the phase change of GeSbTe

〇Haruyuki Sano¹, Masashi Kuwahara² (1.NIT Ishikawa College, 2.AIST)

Keywords:phase change, GST, multi-physics simulation

We have developed a simulation model of the phase change of Ge₂Sb₂Te₅ (GST) for application to simulations of optical memory and optical switch. To confirm the validity of the phase change model, multi-physics simulation of crystallization of the GST thin film by laser light irradiation was carried out. The calculation reproduced the experimental results of the increase in reflectance due to the GST crystallization. In this study, two models about the crystal nucleation probability and crystal growth velocity were examined.