[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-2] Fabrication of AlN Templates with Dislocation Density of 10⁷ cm^-2 by High-temperature Annealing

〇Hideto Miyake^1,2, Kanako Shojiki², Shiyu Xiao¹, Kenjiro Uesugi^3,1, Shigeyuki Kuboya³ (1.Grad. School of RIS, Mie Univ., 2.Grad. School of Eng. 2, Mie Univ., 3.SPORR 3, Mie Univ.)

Keywords:Nitride semiconductor, AlM, anneal

We have fabricated an AlN film with a low dislocation density by RF sputtering (Sp-AlN) and high-temperature annealing (FFA) with a Face-to-Face set-up.The technique is easily to produce an AlN film with a low dislocation density.
Fabrication of AlN templates with dislocation densities of 1 × 10⁸ cm^-2 or less is very important for the fabrication of deep UV LEDs with high internal quantum efficiency.
A fabrication method in which AlN is further deposited on an annealed FFA Sp-AlN template by a sputtering method and then annealed again. The transmission dislocation density is 4.9 × 10⁷ cm^-2 (from plane TEM observation).