[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-4] Examination of growth mechanism of metastable phases of Ga₂O₃ and In₂O₃

〇Yoshinao Kumagai¹, Ken Goto¹, Rie Togashi², Tomohiro Yamaguchi³, Hisashi Murakami¹ (1.Tokyo Univ. Agric. & Tech., 2.Sophia Univ., 3.Kogakuin Univ.)

Keywords:Oxide semiconductor, Ga2O3, metastable phase

Oxide semiconductor crystals III₂O₃ (III = Al, Ga, In), which are promising materials for next-generation power devices, have various polymorphs. In Ga₂O₃, devices are fabricated in β- and α-phases, which are thermally stable and metastable phases, respectively. In this presentation, we will introduce the results of examining the key parameters for the growth of metastable phases of Ga₂O₃ and In₂O₃ using the halide vapor phase epitaxy (HVPE) and mist-CVD method.