[18p-Z04-1~9] Materials Science and Advanced Electronics Created by Singularity

[18p-Z04-6] Development of Diamond Electron Devices using III-Nitride Nanolaminate Singularity Structure

〇Yasuo Koide¹, Jiangwei Liu¹, Masataka Imura¹, Meiyong Liao¹ (1.NIMS)

Keywords:diamond, Nanolaminate Structure

Diamond is expected to be applied as a next-generation power device material after SiC and GaN because of its excellent ultimate physical properties. In order to effectively control the high concentration holes in the p-type diamond surface conductive layer, it is desirable to develop the MOS gate structure with a larger dielectric constant. In this research, we aim to apply the oxide and III nitride nanolaminate thin film as a gate insulator and explore the possibility of diamond FET utilizing high hole concentration channel.