5:00 PM - 5:30 PM
[18p-Z04-7] Recent Progress on GaAs and GaN-based terahertz quantum-cascade lasers
Keywords:Quantum-Cascade Laser, nitride semiconductor, MBE
We have developed GaAs and GaN-based high-performance THz-QCL. By solving some limiting factors of the inter-subband transition optical gain, a dramatic improvement in optical gain and room temperature optical gain were obtained from the analysis. A GaAs-based THz-QCL was fabricated to achieve a high output operation over 1 W. We also clarified that room temperature optical gain can be obtained for a GaN-based THz-QCL, and fabricated a GaN / AlGaN THz-QCL based on the analysis.