The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

8 Plasma Electronics » 8.1 Plasma production and diagnostics

[18p-Z17-1~20] 8.1 Plasma production and diagnostics

Thu. Mar 18, 2021 1:30 PM - 7:00 PM Z17 (Z17)

Hiroshi Akatsuka(Tokyo Tech), Kentaro Tomita(Hokkaido Univ.), Manabu Tanaka(Kyushu Univ.)

3:45 PM - 4:00 PM

[18p-Z17-9] Effect of Oxygen Admixture on Excited-State Number Densities of Low-Pressure Argon Plasma Based on Collisional Radiative Model

〇(M2)Yusuke Tsuchiya1, Atushi Nezu2,3, Hiroshi Akatsuka3,1 (1.Sch.Eng.,Tokyo Tech, 2.Open Facility Center,Tokyo Tech, 3.IIR,Tokyo Tech)

Keywords:collisional-radiative model, low-Pressure Argon Plasma, effect of Oxygen Admixture

Diagnostic techniques for measuring the state of the plasma are important for accurate control of the process plasma.According to previous studies, "a method of non-invasively diagnosing the temperature and density of electrons from the number density of excited states obtained by emission spectroscopy based on the collision emission (CR) model" is possible in principle.However, in actual process plasma, there is a concern that the mixing of process gas will affect the excited state.
Therefore, in this study, we investigated the effect on the number density of excited states by incorporating a loss term assuming oxygen molecule contamination into the ArCR model of low-pressure Ar plasma, which is often used for process plasma.