Study on ohmic contact formation on n-GaN with TJ of MQS laser

Yukimi Jinno; Renji Okuda; Koichi Mizutani; Koji Okuno; Kazuyoshi Iida; Yoshiya Miyamoto; Shiori Yamamura; Naoki Sone; Kazuma Ito; Sae Katsuro; Weifang Lu; Nanami Nakayama; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[18p-Z23-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z23 (Z23)

Toshiyuki Ihara(NICT), Yukihiro Harada(Kobe Univ.), Ryuichi Ohta(NTT)

4:00 PM - 4:15 PM

[18p-Z23-10] Study on ohmic contact formation on n-GaN with TJ of MQS laser

〇Yukimi Jinno¹, Renji Okuda¹, Koichi Mizutani⁴, Koji Okuno^1,4, Kazuyoshi Iida^1,4, Yoshiya Miyamoto¹, Shiori Yamamura¹, Naoki Sone^1,3, Kazuma Ito¹, Sae Katsuro¹, Weifang Lu¹, Nanami Nakayama¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO., 4.Toyoda Gosei Co.,Ltd)

Keywords:nanowire, tunnel junction