The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[18p-Z31-1~19] 17.3 Layered materials

Thu. Mar 18, 2021 1:30 PM - 6:30 PM Z31 (Z31)

Masaki Nakano(Univ. of Tokyo), Moriyama Satoshi(Tokyo Denki Univ.)

3:45 PM - 4:00 PM

[18p-Z31-10] The relationship between the c-axis lattice spacing and the valence band maximum in multi-layer MoS2(1-x)Te2x alloy

Yusuke Hibino1,2, Kota Yamazaki1, Yusuke Hashimoto1, Hideaki Machida3, Masato Ishikawa3, Hiroshi Sudoh3, Hitoshi Wakabayashi4, Atsushi Ogura1,5 (1.Meiji Univ., 2.JSPS Research Fellow, 3.Gas Phase Growth Ltd., 4.Tokyo Tech, 5.MREL)

Keywords:transition metal dichalcogenide, alloy, electronic structure

There are numerous applications in different fields that are being discussed for layered materials. Transition metal dichalcogenides (TMD) are drawing much attention as it is expected to be one of the next-generation semiconductor materials. The alloy of TMD is expected to widen the application possibility of TMD. However, the physical properites of TMD alloy, especially multilayer material, still remain unclear. In this presentation, we report the relationship between the physical structure and electronic structure we have come to know through the fabrication and study of , the alloy of MoS2 and MoTe2.