[18p-Z31-1~19] 17.3 Layered materials

△ [18p-Z31-5] Realization of quantum point contact in p-type WSe₂

〇Kohei Sakanashi¹, Peter Krueger¹, Jonathan Bird², Kenji Watanabe³, Takashi Taniguchi³, Gil-Ho Kim⁴, Nobuyuki Aoki¹ (1.Chiba Univ., 2.Univ. at Buffalo, 3.NIMS, 4.SKKU)

Keywords:quantum point contact, tungsten diselenides, spin-orbit coupling

In this study, we fabricated quantum point contact (QPC) device in trilayer tungsten diselenides (WSe₂), and we observed relatively high hole mobility as high as 2500 cm²/Vs at 2K. By using split gates structure, we observed quantized conductance, and the level degeneracy was g=1 instead of g=2 originated from spin degeneracy. This level splitting may be induced by strong spin-orbit coupling in valence band of trilayer WSe₂.