5:15 PM - 5:30 PM
[18p-Z33-15] In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Keywords:Ga2O3, Epitaxial lateral overgrowth
Epitaxial lateral over growth technique was applied to a heteroepitaxial κ-Ga2O3 film which was composed of in-plane 120o rotational nano-domains. When a stripe-patterned mask was parallel to the [11-20] direction of the sapphire substrate, the three in-plane orientations of the κ-Ga2O3 domains converged into one whose [010] direction was perpendicular to the stripe through a geometrical natural selection mechanism