13:45 〜 14:00
▲ [18p-Z33-3] The Emission Power of ZnO Nanoparticle-based LEDs enhanced by adding Silica nanoparticles.
キーワード：Light Emitting Diode, ZnO nanoparticle, Emission Power
Light-emitting diodes (LEDs) based on wide bandgap semiconductor have considerable attention for fabricating lighting devices, mobile appliances and medical instruments. Zinc Oxide (ZnO) with a large direct bandgap of 3.37 eV is one of the candidates to realize commercial ultraviolet (UV) emission devices. ZnO nanoparticle (NP) based light-emitting devices were fabricated using nitrogen-doped ZnO nanoparticles by coating methods on electrode film [1]. We had reported the enhancement of emission intensity of ZnO NP based LEDs by inserting p-type NPs active layer [2]. However, it still has a problem of leakage current in the ZnO NPs with the binder layer. In this study, for improving emission intensity and reducing leakage current, we added silica NPs with p-ZnO NPs in the hole transporting layer.
In the research, we synthesized nitrogen-doped ZnO nanoparticles by gas evaporation method [3]. The p-ZnO NPs active layer deposited on a GZO electrode by simple spray method. We prepared p-ZnO NPs solutions by mixing with a binder (Silsesquioxane) and silica nanoparticles. The p-ZnO NPs solutions coated on the p-ZnO NPs active layer by spin coating. These layers were sintered by the hot plate at~ 300°C. Finally, the gold (Au) electrodes were evaporated with 30 nm thickness on both the p-ZnO NPs layer and n-type electrode. We measured the properties of ZnO NPs LEDs and compared the emission power of LEDs with and without silica NPs. The part of EL power measured from the glass substrate side. The output power improved and reduced resistivity by adding silica NPs in the devices. Later, we will present the detailed of the results.
Reference
[1] Y. Fujita, K. Moriyama, Y. Hiragino, Y. Furubayashi, H. Hashimoto, and T. Yoshida, Phys. Status Solidi C11,1260 (2014).
[2] Y. Fujita, Islam M. Shafiqul, J. Lin, T. Yoshida, Y. Fujita. JSAP 2017 Fall Meeting, 8a-PA4-3.
[3] Y. Fujita, Japanese patent No.4072620.
In the research, we synthesized nitrogen-doped ZnO nanoparticles by gas evaporation method [3]. The p-ZnO NPs active layer deposited on a GZO electrode by simple spray method. We prepared p-ZnO NPs solutions by mixing with a binder (Silsesquioxane) and silica nanoparticles. The p-ZnO NPs solutions coated on the p-ZnO NPs active layer by spin coating. These layers were sintered by the hot plate at~ 300°C. Finally, the gold (Au) electrodes were evaporated with 30 nm thickness on both the p-ZnO NPs layer and n-type electrode. We measured the properties of ZnO NPs LEDs and compared the emission power of LEDs with and without silica NPs. The part of EL power measured from the glass substrate side. The output power improved and reduced resistivity by adding silica NPs in the devices. Later, we will present the detailed of the results.
Reference
[1] Y. Fujita, K. Moriyama, Y. Hiragino, Y. Furubayashi, H. Hashimoto, and T. Yoshida, Phys. Status Solidi C11,1260 (2014).
[2] Y. Fujita, Islam M. Shafiqul, J. Lin, T. Yoshida, Y. Fujita. JSAP 2017 Fall Meeting, 8a-PA4-3.
[3] Y. Fujita, Japanese patent No.4072620.