[19a-P02-1~9] 8 Plasma Electronics(Poster)

[19a-P02-8] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes (III)

〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Tomoki Fujimura¹, Yuji Hayashi¹, Giichiro Uchida², Akinori Ebe³, Yuichi Setsuhara¹ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

Keywords:IGZO, AOS